CCD Question

[Zoran Ninkov]

As I understand it when CCDs are thinned for backside illumination
purposes the wafers are initially lapped to some intermediate thickness
and then etched to the final desired thickness, which depends on the
wavelength of operation.  Normally the etch stops (or at least slows
down significantly) at the interface between the epitaxial and substrate
silicon.  After this etching is concluded (and before backside damage
control is done) what is the rms surface roughness of the back surface.
Is that figure larger if you stop at the epi-bulk boundary or if you
continue even thinner into the epi ?

Thanks ...

Zoran

-- 
Dr. Zoran Ninkov
Center for Imaging Science
Rochester Institute of Technology
54 Lomb Memorial Drive
Rochester   NY 14623-5604

tel : 716 - 475 7195
fax : 716 - 475 5988
e-mail : ninkov at cis.rit.edu